China Infrared Photoelectric Sensor

S1336-44BQ Silicon Photodiode Pin Low capacitance UV To NIR For Precision Photometry

Sensitive area:3.6 × 3.6mm

Number of pixels:1

Refrigeration and:Non - cooled
S14137-01CR Photosensor With Front End IC Compact 16 Element APD array

Number of output:16

Element pitch:0.5mm

Photosensitive area (per element):0.15 X 0.43mm
S16429-01CT Photosensor With Front End IC Built In Gain Stabilized APD

Photosensitive area:Diameter 0.2mm

Reverse voltage:0 To VBR

Sealing material:Silicone Resin
S14645 Si APD High Speed Compact Surface Mount High Sensitivity Featuring Low Bias Operation

Storage Temperature:-40 To +100℃

Photosensitive Size:0.2mm

Forward Current:10mA
S15639-1325PS Near infrared high sensitivity MPPC SiPM Multi Pixel Photon Conuter

Effective photosensitive area:1.3 X 1.1mm

Thermal resistance:409

Pixel pitch:25um
S16430-01CR Photosensor With front End IC Built In 16 Element Gain Stabilized

Package:Glass Epoxy

Detector:Si APD Array

Number of output:16
YJJ S12023-02 Near-Infrared Type Silicon Photodiode For Optical Distance Measuring Instrument

Plastic package:6 * 8 mm

Spectral response range:400 to 540 nm (p=460 nm)

High sensitivity:High sensitivity
S7505-01 RGB Color Sensor Color Identification For Industrial Production Lines And Consumer Electronics

Photosensitive Area:3.2×3.2 mm

Maximum Dark Current:0.2 nA

Rise Time:0.5 μs
YJJ S7505-01 RGB Color Sensor Silicon Photodiode Array Is Used To Detect Intensity Of RGB Light

Operating temperature Topr:-10 to +60

Storage temperature Tstg:-20 to +70

Package size:9.0 *9.6 * 2.1 mm
YJJ S9219 S9219-01 Silicon Photodiode Is Used For Visible Light Detection

S9219:φ11.3 mm (circular)

S9219-01:3.6×3.6 mm (square)

Pixel count:1 (single pixel)
G12180-003A InGaAs PIN photodiode Low And Low Dark Current Noise Non Cooled

Photosensitive area:φ0.3 Mm

Peak sensitivity wavelength (typical):1.55 μm

Cooling:Uncooled
Disinfection Deep Short Wave UV Leads to 254 Nm 265 Nm 255 Nm 280 Nm 275 Nm UV Sterilizer Leading 3535 UV LED

Model NO.:DS-UV254P3Z-3535AA-S-06

Chip Material:AlGaInP

Emitting Color:Purple Light

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Infrared Photoelectric Sensor

China Infrared Photoelectric Sensor

S1336-44BQ Silicon Photodiode Pin Low capacitance UV To NIR For Precision Photometry

S14137-01CR Photosensor With Front End IC Compact 16 Element APD array

S16429-01CT Photosensor With Front End IC Built In Gain Stabilized APD

S14645 Si APD High Speed Compact Surface Mount High Sensitivity Featuring Low Bias Operation

S15639-1325PS Near infrared high sensitivity MPPC SiPM Multi Pixel Photon Conuter

S16430-01CR Photosensor With front End IC Built In 16 Element Gain Stabilized

YJJ S12023-02 Near-Infrared Type Silicon Photodiode For Optical Distance Measuring Instrument

S7505-01 RGB Color Sensor Color Identification For Industrial Production Lines And Consumer Electronics

YJJ S7505-01 RGB Color Sensor Silicon Photodiode Array Is Used To Detect Intensity Of RGB Light

YJJ S9219 S9219-01 Silicon Photodiode Is Used For Visible Light Detection

G12180-003A InGaAs PIN photodiode Low And Low Dark Current Noise Non Cooled

Disinfection Deep Short Wave UV Leads to 254 Nm 265 Nm 255 Nm 280 Nm 275 Nm UV Sterilizer Leading 3535 UV LED

Oxygen Gas Sensor

Eelctrochemical Gas Sensor 5FO AAA32-400 Eelctrochemical Gas Sensor Oxygen Five Series 2 Years In Air

2FO AA625-180 Air Oxygen Sensor Combustion Efficiency For Fixed Gas Detector

O2-C2 Oxygen Gas Sensor Electrochemical O2 Sensor For Oxygen Alarm Two Year Life

Electrochemical Gas Sensor

4NH3-500 CLE-1052-4000 Ammonia Electrochemical Gas Sensor 500 PPM

KE-25 KE-50 Electrochemical Oxygen Gas Sensor Greenhouse Use For Refrigeration

5SF AD526-W00 Sulfur Dioxide Electrochemical Gas Sensor 2000ppm 5 Series