China Infrared Photoelectric Sensor

S1336-44BQ Silicon Photodiode Pin Low capacitance UV To NIR For Precision Photometry

Sensitive area:3.6 × 3.6mm

Number of pixels:1

Refrigeration and:Non - cooled
S5981 4 Segment Surface Mount Silicon PIN Photodiode for Industrial Processing and Precision Machinery

Detector Type:4 segment Si PIN photodiode array

Spectral Range:320~1100 nm

Peak Wavelength:960 nm (typ.)
UV to Visible Precision Photometry Suppressed IR Sensitivity Infrared Silicon PhotoS1227-16BQ S1227-33BQ S1227-66BQ S1227-1010BQ

Active area size:1.1 * 5.9

Package:2.7 * 15

Effective active area:5.9
S2386-18L Si Photodiode For Visible to Near IR General Purpose Photometry

Pakcage:TO-18

Reverse Voltage VR Max:30V

Operating Temperature:-40 to +100 ℃
JSIR350-4-AL-R-D6 NDIR Gas Analysis Infrared Radiation Sources On T039

Operation Current 2:Typ. 141mA

Mass:~1G

Hot Resistant:40±20Ω
G12183-010K In GaAs PIN Photodiode Sensors Long Wavelength Type Low Noise

Colling:Non-Cooled

Cutoff wavelength:2.55 To 2.6 Um

Operating Temperature:-40 To +85℃
L4643 10 W Xenon Flash Lamps Low Cost Electrodes Long Life Borosilicate Glass

Guaranteed life *4:1 X10°

Maximum repetition rate *1:100Hz

Side tube material:Borosilicate Glass
RPFA913CC Pyro Electric Flame Sensor Pyroelectric Effect Single Channel

Window Size:5.0*5.0mm

Sensitive element size:3*3mm

Filter center wavelength:3.8um
RDA226S-F Digital Pyroelectric Infrared Sensor High Precision AD Signal Process

Voltage:2.7 -3V

Pin limit:-100 to 100 mA

Storage temperature:-40 to 125 ℃
S14137-01CR Photosensor With Front End IC Compact 16 Element APD array

Number of output:16

Element pitch:0.5mm

Photosensitive area (per element):0.15 X 0.43mm
S16429-01CT Photosensor With Front End IC Built In Gain Stabilized APD

Photosensitive area:Diameter 0.2mm

Reverse voltage:0 To VBR

Sealing material:Silicone Resin
S14645 Si APD High Speed Compact Surface Mount High Sensitivity Featuring Low Bias Operation

Storage Temperature:-40 To +100℃

Photosensitive Size:0.2mm

Forward Current:10mA

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Infrared Photoelectric Sensor

China Infrared Photoelectric Sensor

S1336-44BQ Silicon Photodiode Pin Low capacitance UV To NIR For Precision Photometry

S5981 4 Segment Surface Mount Silicon PIN Photodiode for Industrial Processing and Precision Machinery

UV to Visible Precision Photometry Suppressed IR Sensitivity Infrared Silicon PhotoS1227-16BQ S1227-33BQ S1227-66BQ S1227-1010BQ

S2386-18L Si Photodiode For Visible to Near IR General Purpose Photometry

JSIR350-4-AL-R-D6 NDIR Gas Analysis Infrared Radiation Sources On T039

G12183-010K In GaAs PIN Photodiode Sensors Long Wavelength Type Low Noise

L4643 10 W Xenon Flash Lamps Low Cost Electrodes Long Life Borosilicate Glass

RPFA913CC Pyro Electric Flame Sensor Pyroelectric Effect Single Channel

RDA226S-F Digital Pyroelectric Infrared Sensor High Precision AD Signal Process

S14137-01CR Photosensor With Front End IC Compact 16 Element APD array

S16429-01CT Photosensor With Front End IC Built In Gain Stabilized APD

S14645 Si APD High Speed Compact Surface Mount High Sensitivity Featuring Low Bias Operation

Oxygen Gas Sensor

Eelctrochemical Gas Sensor 5FO AAA32-400 Eelctrochemical Gas Sensor Oxygen Five Series 2 Years In Air

2FO AA625-180 Air Oxygen Sensor Combustion Efficiency For Fixed Gas Detector

O2-C2 Oxygen Gas Sensor Electrochemical O2 Sensor For Oxygen Alarm Two Year Life

Electrochemical Gas Sensor

4NH3-500 CLE-1052-4000 Ammonia Electrochemical Gas Sensor 500 PPM

KE-25 KE-50 Electrochemical Oxygen Gas Sensor Greenhouse Use For Refrigeration

5SF AD526-W00 Sulfur Dioxide Electrochemical Gas Sensor 2000ppm 5 Series