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Infrared Photoelectric Sensor

China Infrared Photoelectric Sensor

G12181-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Optical Communication Systems

Temperature Coefficient of Sensitivity:1.08 times/℃

Storage Temperature Range:-55℃ – 125℃

Operating Temperature Range:-40℃ – 100℃
YJJ S8745-01 S8746-01 Silicon Photodiodes With Preamplifier Are Used For Low-Light Measurement

Built-in Rf:1 GΩ and Cf = 5 pF

Light-emitting surface:2.4 × 2.4 mm

Package:Metal
YJJ G12181-003A Non-cooled InGaAs PIN Photodiode Can Be Used to Detect Sizes of Various Light-Sensitive Non-cooled InGaAs PIN Photodiode Can Be Used To Detect Sizes Of Various Light-Sensitive Areas

Pixel count:1

Package:Metal

Package category:TO18
YJJ S2386-5K Analytical Equipment Optical Measurement Equipment Japanese Photodiodes

Light-emitting surface:2.4 × 2.4 mm

Package:Metal

Package type:TO-5
YJJ S6967 S6967-01 Silicon PIN Photodiode Plastic SIP Package For Detection In Visible Light To Near-Infrared Range

Spectral response range:320 to 1060 nm

Maximum sensitivity wavelength:900 nm

Photo-sensitivity:0.65 A/W
EMIRS200_AT01T_BR090 Thermal MEMS Based Infrared Source TO39 Package

Type:Infrared

Operating Temperature:-40°C ~ 125°C

Mounting Type:Through Hole
YJJ S10227-10 Small Resin Sealed CMOS Linear Array Image Sensor For Industrial Applications

Pixel pitch:12.5 μm

Pixel height:250 μm

Signal data rate:maximum 5 MHz
YJJ S3072 Silicon PIN Photodiode Is Used For High Speed Pulse Light Detection In Space Optical Transmission

Light-emitting surface:3.0 mm

Package:Metal

Package category:TO-5
S6428-01 Si Photodiodes RGB Color Sensor Plastic Material

Photosensitive area:2.8 × 2.4 mm

Spectral response range:400 to 540 nm

Dark current (max.):0.02 nA
S2386-18K Si Photodiodes For Visible to Near IR General Purpose Photometry High Sensitivity

Package:TO-18

Reverse Voltage:30V

Operating Temperature:-40 to +100℃
S1337-1010BR Si Photodiode For UV to IR Precision Photometry Low Capacitance

Window Material:Resin Potting

Package:15*16.5mm

Photosensitive are size:10*10mm
BPW21R Planar Silicon PN Photodiode Low Dark Current TO-5 Package

Reverse voltage:10V

Power dissipation:300mW

Junction temperature:125℃

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Infrared Photoelectric Sensor

China Infrared Photoelectric Sensor

G12181-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Optical Communication Systems

YJJ S8745-01 S8746-01 Silicon Photodiodes With Preamplifier Are Used For Low-Light Measurement

YJJ G12181-003A Non-cooled InGaAs PIN Photodiode Can Be Used to Detect Sizes of Various Light-Sensitive Non-cooled InGaAs PIN Photodiode Can Be Used To Detect Sizes Of Various Light-Sensitive Areas

YJJ S2386-5K Analytical Equipment Optical Measurement Equipment Japanese Photodiodes

YJJ S6967 S6967-01 Silicon PIN Photodiode Plastic SIP Package For Detection In Visible Light To Near-Infrared Range

EMIRS200_AT01T_BR090 Thermal MEMS Based Infrared Source TO39 Package

YJJ S10227-10 Small Resin Sealed CMOS Linear Array Image Sensor For Industrial Applications

YJJ S3072 Silicon PIN Photodiode Is Used For High Speed Pulse Light Detection In Space Optical Transmission

S6428-01 Si Photodiodes RGB Color Sensor Plastic Material

S2386-18K Si Photodiodes For Visible to Near IR General Purpose Photometry High Sensitivity

S1337-1010BR Si Photodiode For UV to IR Precision Photometry Low Capacitance

BPW21R Planar Silicon PN Photodiode Low Dark Current TO-5 Package

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