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Infrared Photoelectric Sensor

China Infrared Photoelectric Sensor

YJJ G6854-01 InGaAs PIN Photodiode Spherical Lens Window Packaged

Heat dissipation:Non-cooling type

Sensitivity wavelength range:0.9 to 1.7 μm

Maximum sensitivity wavelength (typical value):1.55 μm
S16767-01MS Silicon Photodiode Low Dark Current For Visible Range Premolded Package

Photosensitive area:2.8 × 2.4 mm

Packaging:Plastic

Cooling:Uncooled
Visible to Infrared Band Silicon Photodiodes S16840-02MS with 0.3 A/W Photosensitive Sensitivity and 2.5 μs Rise Time

Dark current:10 pA

Rise time:2.5 μs

Photosensitive sensitivity:0.3 A/W
YJJ S16838-01MS Silicon Photodiode is Used in the Visible Light to Near-infrared Band

Junction capacitance:700 pF

Rise time:2.5 μs

Dark current:10 pA
YJJ S16765-01MS Silicon Photodiode is Used in the Visible Light to Near-infrared Band

Photosensitive sensitivity:0.3 A/W

Dark current:10 pA

Rise time:2.5 μs
YJJ S16767-01MS Silicon Photodiode is Used in the Visible Light to Near-infrared Band

Photosensitive sensitivity:0.3 A/W

Dark current:10 pA

Rise time:2.5 μs
YJJ S4111-35Q Silicon Photodiode Array is Used in The Ultraviolet to Near-infrared Band

Pixel size:0.9 × 4.4mm

Pixel count:35

Packaging:Ceramic
S1133 S1133-14 S1133-01 Si Photodiode Ceramic Package Photodiode With Low Dark Current

Active area size:2.4x2.8

Effective active area:6.6

Reverse voltage VR Max.:10
Highly Sensitive S7686 Si Photodiode with Peak Sensitivity Wavelength at 550 nm and Spectral Response Range of 480-660 nm

Reverse voltage:10 v

Operating temperature:-10 to +60 °C

Storage temperature:-20 to +70 °C
G12180-005A InGaAs PIN photodiodes with Low Noise in TO-18 Package

Light-receiving side:φ0.5 mm

Number of pixels:1

encapsulation:metal
G12180-010A Low Junction Capacitance InGaAs PIN Photodiodes with Sensitivity Wavelength Range of 0.9 to 1.7 μm and Metal Encapsulation

Light-receiving side:φ1.0 mm

Number of pixels:1

encapsulation:metal
S6931-01 Silicon Photodiodes Molded Into Clear Plastic Packages

Light-receiving side:2.4 × 2.8 mm

encapsulation:plastics

Cooling:Non-cooled

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Infrared Photoelectric Sensor

China Infrared Photoelectric Sensor

YJJ G6854-01 InGaAs PIN Photodiode Spherical Lens Window Packaged

S16767-01MS Silicon Photodiode Low Dark Current For Visible Range Premolded Package

Visible to Infrared Band Silicon Photodiodes S16840-02MS with 0.3 A/W Photosensitive Sensitivity and 2.5 μs Rise Time

YJJ S16838-01MS Silicon Photodiode is Used in the Visible Light to Near-infrared Band

YJJ S16765-01MS Silicon Photodiode is Used in the Visible Light to Near-infrared Band

YJJ S16767-01MS Silicon Photodiode is Used in the Visible Light to Near-infrared Band

YJJ S4111-35Q Silicon Photodiode Array is Used in The Ultraviolet to Near-infrared Band

S1133 S1133-14 S1133-01 Si Photodiode Ceramic Package Photodiode With Low Dark Current

Highly Sensitive S7686 Si Photodiode with Peak Sensitivity Wavelength at 550 nm and Spectral Response Range of 480-660 nm

G12180-005A InGaAs PIN photodiodes with Low Noise in TO-18 Package

G12180-010A Low Junction Capacitance InGaAs PIN Photodiodes with Sensitivity Wavelength Range of 0.9 to 1.7 μm and Metal Encapsulation

S6931-01 Silicon Photodiodes Molded Into Clear Plastic Packages

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