Chip size:0.22 mm2
Package:SMD 2835
Features:High responsiveness, low dark current, good visible light blindness
Product description:The chip size is 0.22mm2
encapsulation:TO46
Material:Sapphire window
Chip size:0.77 mm2
encapsulation:TO46
Features:Sapphire window, high sensitivity, low dark current
Storage temperature:-40-90°
Working temperature:-30-85°
Reverse voltage:Top - 30 ℃ Vr, max. If,max. V ㎂ Ir = 1
Chip size:1 mm2
encapsulation:TO46
Features:Sapphire window, high sensitivity, low dark current
Material:gallium nitride base material
Test object:broadband UVA+UVB+UVC photodiode
Principle:Operating in photovoltaic mode
Material:gallium nitride base material
Broadband:UVA+UVB+UVC photodiode
Principle:Operating in photovoltaic mode
Material:gallium nitride base material
Test conditions:broadband UVA+UVB+UVC photodiode
Principle:Operating in photovoltaic mode
Photosensitive area:2.4 × 2.4 mm
Package:Ceramic
Cooling:Non-cooled
Package:TO-8
Photosensitive area size:5.8*5.8mm
Reverse Voltage vR max:5V
Spectral sensitivity characteristics (short):185 nm
Spectral sensitivity characteristics (long):260 nm
Electrode material:Ni
Spectral dlstrbutlon:185 to 400 nm
Window materlal:UV glass
wvelght:Approx. 1 g