Chip size:0.22 mm2
Package:SMD 2835
Features:High responsiveness, low dark current, good visible light blindness
Product description:The chip size is 0.22mm2
encapsulation:TO46
Material:Sapphire window
Chip size:0.77 mm2
encapsulation:TO46
Features:Sapphire window, high sensitivity, low dark current
Storage temperature:-40-90°
Working temperature:-30-85°
Reverse voltage:Top - 30 ℃ Vr, max. If,max. V ㎂ Ir = 1
Chip size:1 mm2
encapsulation:TO46
Features:Sapphire window, high sensitivity, low dark current
Material:gallium nitride base material
Test object:broadband UVA+UVB+UVC photodiode
Principle:Operating in photovoltaic mode
Material:gallium nitride base material
Broadband:UVA+UVB+UVC photodiode
Principle:Operating in photovoltaic mode
Material:gallium nitride base material
Test conditions:broadband UVA+UVB+UVC photodiode
Principle:Operating in photovoltaic mode
Peak Sensitivity Wavelength (Typ.):800 nm
Spectral Response Range:400 nm - 1000 nm
Dark Current (Max.):2 nA
Photosensitive area:2.4 × 2.4 mm
Package:Ceramic
Cooling:Non-cooled
Photosensitive area:1 x 3.5 mm
Package:Plastic
Peak sensitivity wavelength (typ.):960 nm
Type:High-speed readout type
Image size:6.4 x 0.25 mm
Number of effective pixels:512 x 1 pixels