Chip size:0.22 mm2
Package:SMD 2835
Features:High responsiveness, low dark current, good visible light blindness
Product description:The chip size is 0.22mm2
encapsulation:TO46
Material:Sapphire window
Chip size:0.77 mm2
encapsulation:TO46
Features:Sapphire window, high sensitivity, low dark current
Storage temperature:-40-90°
Working temperature:-30-85°
Reverse voltage:Top - 30 ℃ Vr, max. If,max. V ㎂ Ir = 1
Chip size:1 mm2
encapsulation:TO46
Features:Sapphire window, high sensitivity, low dark current
Material:gallium nitride base material
Test object:broadband UVA+UVB+UVC photodiode
Principle:Operating in photovoltaic mode
Material:gallium nitride base material
Broadband:UVA+UVB+UVC photodiode
Principle:Operating in photovoltaic mode
Material:gallium nitride base material
Test conditions:broadband UVA+UVB+UVC photodiode
Principle:Operating in photovoltaic mode
Package:TO-5
Photosensitive Area Size:2.4*2..4mm
Reverse Voltage:5V
Package:8.9*10.1mm
Active Area Size:5.8*5.8mm
Reverse Voltahe VR Max.:5V
Response Time:1-2ms
Sensitivity:High
Storage Temperature:-40 To +125°C
Type:Near infrared type
Photosensitive area:φ1 mm
Package:Metal